High On-state Current P-type Tunnel Effect Transistor Based on The Doping Modulation

With the goal of solving the problem of the low on-state current in p-TFETs, this paper analyzes the mechanism of adjusting the tunneling current of the TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. The doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of the same structure devices. This method provides a new idea for the realization of high on-state current TFET devices.