Back to Search
Start Over
Technologies and challenges of fine-pitch backside via-last 3DIC TSV process integration and its electrical characteristics and system applications
- Source :
- Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- Technologies of fine-pitch backside via last 3DIC through silicon via (TSV) process are developed to be applied to the mass production of 3DIC products. The detailed process development key points and challenges are disclosed. The electrical data are also analyzed to check the TSV process. Also, its application in real 3DIC system is demonstrated to show the benefits of system form factor and frame rate.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
- Accession number :
- edsair.doi...........1c0d6000901610ee90e2695ae5a6dd9b