Electrophysical properties of nanostructures Al-SiMP-pSi-Al, passivated by iron

Authors :: D. I. Bilenko
Viktor V. Galushka
E. A. Zharkova
D. V. Terin
E. I. Hasina
I. B. Mysenko
Source :: 2012 International Conference on Actual Problems of Electron Devices Engineering.
Publication Year :: 2012
Publisher :: IEEE, 2012.
Abstract: The current-voltage and the current-capacitance characteristics of structures on the basis of mesoporous silicon received by nonelectrolitic method of etching at passivation by iron (SiMP:Fe) are investigated. It is shown, that in heterostructures Al-SiMP:Fe-pSi-Al conductivity and barriers depend on Fe concentration no monotonic.

Subjects :: Nanostructure
Materials science
Silicon
chemistry
Chemical engineering
Passivation
Aluminium
Etching (microfabrication)
chemistry.chemical_element
Heterojunction
Conductivity
Mesoporous material

Database :: OpenAIRE
Journal :: 2012 International Conference on Actual Problems of Electron Devices Engineering
Accession number :: edsair.doi...........1b8cc4330611558bebf3309ca88955fd
Full Text :: https://doi.org/10.1109/apede.2012.6478095