PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen

Highly uniform ZrO 2 films were deposited by plasma enhanced atomic layer deposition (PEALD) using tetrakis(ethylmethylamino)zirconium (TEMAZ) and O 2 as precursors. The deposition rates were 0.14 and 0.11 nm/cycle at temperatures of 110 and 250°C, respectively. ZrO 2 films deposited at 150°C contained ∼3% nitrogen, incorporated from the Zr-precursor, which contains four amino-groups. In the absence of a plasma, a ZrO 2 film was not deposited with TEMAZ and O 2 at 150°C. The electrical characteristics including breakdown strength and permitivity were also evaluated. The permitivities for 110°C- and 200°C-ZrO 2 films were 16.1 and 26.9, respectively.