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Epitaxial growth of Bi thin films on Ge(111)
- Source :
- Applied Surface Science. 256:1252-1256
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the ( 2 × 1 ) structure. However, the structure does not grow to a long-range order. Following the formation of a ( 1 × 1 ) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6–10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).
- Subjects :
- Materials science
Low-energy electron diffraction
General Physics and Astronomy
chemistry.chemical_element
Germanium
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Epitaxy
Surfaces, Coatings and Films
law.invention
Crystallography
Lattice constant
chemistry
Electron diffraction
law
Monolayer
Scanning tunneling microscope
Thin film
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 256
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........1b56d60fb13330bc00148f58a447e564