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Surface states in a HgTe quantum well and scattering by surface roughness

Authors :
L. S. Braginskii
Sergey A. Dvoretsky
Nikolay N. Mikhailov
M. V. Entin
A. A. Dobretsova
Z. D. Kvon
Source :
JETP Letters. 101:330-333
Publication Year :
2015
Publisher :
Pleiades Publishing Ltd, 2015.

Abstract

Scattering of two-dimensional electrons in wide (d = 18–22 nm) HgTe-based quantum wells has been thoroughly studied. The mobility has been found to reach a maximum and then to decrease at two-dimensional electron densities above (2–6) × 1011 cm−2 owing to scattering by roughness of the quantum well. The theory of scattering by roughness has been elaborated taking into account transformation of the wavefunction with an increase in the electron density. Good agreement of this theory with the experiment indicates the existence of surface states at the interfaces of the wide HgTe quantum well.

Details

ISSN :
10906487 and 00213640
Volume :
101
Database :
OpenAIRE
Journal :
JETP Letters
Accession number :
edsair.doi...........1b302be7c8983a82df93eba4c176977b