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Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
- Source :
- Applied Physics Letters. 88:192103
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........1b1c6274b98998a2df371596765f1b61
- Full Text :
- https://doi.org/10.1063/1.2202752