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Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

Authors :
Y. F. Dong
A. C. H. Huan
J. S. Pan
N. Sutanto
Jianwei Chai
Shijie Wang
Yuan Ping Feng
Source :
Applied Physics Letters. 88:192103
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film.

Details

ISSN :
10773118 and 00036951
Volume :
88
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........1b1c6274b98998a2df371596765f1b61
Full Text :
https://doi.org/10.1063/1.2202752