Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist

MLA

Leonidas E. Ocola, and David A. Czaplewski. “Increased Pattern Transfer Fidelity of ZEP 520A during Reactive Ion Etching through Chemical Modifications by Additional Dosing of the Electron Beam Resist.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 29, Mar. 2011, p. 021601. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1a3f4b07d1a9973f4f100b9525b5d5f9&authtype=sso&custid=ns315887.

APA

Leonidas E. Ocola, & David A. Czaplewski. (2011). Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 29, 021601.

Chicago

Leonidas E. Ocola, and David A. Czaplewski. 2011. “Increased Pattern Transfer Fidelity of ZEP 520A during Reactive Ion Etching through Chemical Modifications by Additional Dosing of the Electron Beam Resist.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (March): 021601. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1a3f4b07d1a9973f4f100b9525b5d5f9&authtype=sso&custid=ns315887.