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Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs
- Source :
- Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2010
- Publisher :
- The Japan Society of Applied Physics, 2010.
- Subjects :
- Materials science
Scientific method
Nanotechnology
Nanoscopic scale
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........19ff046cd49b753615673880ceaf673e
- Full Text :
- https://doi.org/10.7567/ssdm.2010.p-3-21