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Position sensitive detectors made by ion implantation in silicon
- Source :
- Nuclear Instruments and Methods. 60:24-26
- Publication Year :
- 1968
- Publisher :
- Elsevier BV, 1968.
-
Abstract
- Implanted dopant ions are used to form the resistive layer in position sensitive p-n junction particle detectors. Position resolution of 0.2 mm fwhm and linearity of ±0.3 mm are obtained.
Details
- ISSN :
- 0029554X
- Volume :
- 60
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods
- Accession number :
- edsair.doi...........19d36e56d5f13384926b4594b29b7e6e