Properties of Large Area (1.4m²) LP-CVD ZnO Layers Deposited by TCO 1200 Production Tool

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 2494-2496
Low pressure chemical vapour deposition (LP-CVD) of ZnO is one of the best methods to produce thin transparent conductive oxide (TCO) layers for amorphous and microcrystalline silicon solar cells. ZnO layers deposited by the LP-CVD method bring many advantages, including easily tuneable deposition processes to production needs and independence from suppliers of SnO2 TCO glasses. Light scattering of as grown LP-CVD ZnO layers is an important factor in improving tandem (micromorph) silicon modules. This paper describes physical properties of ZnO layers grown on a large scale (1300´1100 mm2). All experiments were done on OC Oerlikon TCO 1200 LP-CVD system, which is the first mass production tool for manufacturing of TCO layers with the adjustable Light Trappingä process on 1.4 m2 substrates. Currently achieved values for sheet resistance, transmittance and carrier concentration by variable process parameters are shown. Light scattering of ZnO LP-CVD films is analyzed with an angle resolved scattering equipment.