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Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
- Source :
- Applied Physics Letters. 117:111102
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are presented. The entire DUV-LED process chain was optimized including the reduction of the dislocation density using epitaxially laterally overgrown AlN/sapphire substrates, development of vanadium-based low resistance n-metal contacts, and employment of high thermally conductive AlN packages. Estimated device lifetimes above 1500 h are achieved after a burn-in of 100 h. With the integration of a UV-transparent lens, a strong narrowing of the far-field pattern was achieved with a radiant intensity of 3 mW/sr measured at 20 mA.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Vanadium
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
law.invention
Lens (optics)
chemistry
law
0103 physical sciences
Sapphire
Optoelectronics
Quantum efficiency
Dislocation
0210 nano-technology
business
Radiant intensity
Light-emitting diode
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........196325ec454a7255a7f3f5372688cdb3