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2D materials: roadmap to CMOS integration
- Source :
- 2018 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- To keep Moore's law alive, 2D materials are considered as a replacement for Si in advanced nodes due to their atomic thickness, which offers superior performance at nm dimensions. In addition, 2D materials are natural candidates for monolithic integration which opens the door for density scaling along the 3rd dimension at reasonable cost. This paper highlights the obstacles and paths to a scaled 2D CMOS solution. The baseline requirements to challenge the advanced Si nodes are defined both with a physical compact model and TCAD analysis, which allows us to identify the most promising 2D material and device design. For different key challenges, possible integrated solutions are benchmarked and discussed. Finally we report on the learning from our first lab to fab vehicle designed to bridge the lab and IMEC's 300mm pilot line.
- Subjects :
- 010302 applied physics
Computer science
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Density scaling
Bridge (nautical)
CMOS
0103 physical sciences
Line (geometry)
Key (cryptography)
Electronic engineering
Dimension (data warehouse)
0210 nano-technology
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........19439e2934626f1f9fbd2d7cf000e0b8