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DX-behavior of Si in AlN
- Source :
- Physical Review B. 61:R16283-R16286
- Publication Year :
- 2000
- Publisher :
- American Physical Society (APS), 2000.
-
Abstract
- In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a $\mathrm{DX}$-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.
Details
- ISSN :
- 10953795 and 01631829
- Volume :
- 61
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........191c0084cb816e40ab0bae46d684552b