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Design of Novel SRAM Cell Using Hybrid VLSI Techniques for Low Leakage and High Speed in Embedded Memories
- Source :
- Wireless Personal Communications. 108:2311-2339
- Publication Year :
- 2019
- Publisher :
- Springer Science and Business Media LLC, 2019.
-
Abstract
- Static or leakage power is the dominating component of total power dissipation in deep nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm to 54% at 65 nm technology due to continued device and voltage scaling. Static random access memory (SRAM) is a type of RAM in which data is not written permanently and it does not need to be refreshed periodically. Different techniques have been applied to SRAM cell to reduce leakage power without affecting its performance. A novel 10T SRAM architecture is proposed in this paper which operates in three modes (active, park, standby or hold). The main objective of the proposed architecture is to provide better stability and reduced delay in active mode, reduced leakage current in standby mode and retaining the logic state in park mode. Design metrics such as static and dynamic power, delay, power delay product, energy, energy delay product, rise and fall time, slew rate and static noise margin are taken into account. All the circuits were designed using SYNOPSYS EDA tool and simulated in 30 nm technology. Simulation results shows that the proposed SRAM is much better than conventional and other SRAM cells designed using hybrid techniques.
- Subjects :
- Very-large-scale integration
Hardware_MEMORYSTRUCTURES
Power–delay product
Computer science
020206 networking & telecommunications
Slew rate
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
Computer Science Applications
Fall time
Dynamic demand
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
020201 artificial intelligence & image processing
Static random-access memory
Electrical and Electronic Engineering
Standby power
Hardware_LOGICDESIGN
Leakage (electronics)
Voltage
Electronic circuit
Subjects
Details
- ISSN :
- 1572834X and 09296212
- Volume :
- 108
- Database :
- OpenAIRE
- Journal :
- Wireless Personal Communications
- Accession number :
- edsair.doi...........18d0b83e72d16539f26d94dae9017e81