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Influence of Activation Annealing and Silicidation Process on Dopant Redistribution and Pile-up at the NixSiy/SiO2 Interface
- Source :
- ECS Meeting Abstracts. :635-635
- Publication Year :
- 2006
- Publisher :
- The Electrochemical Society, 2006.
-
Abstract
- not Available.
Details
- ISSN :
- 21512043
- Database :
- OpenAIRE
- Journal :
- ECS Meeting Abstracts
- Accession number :
- edsair.doi...........18a736cf1365546f1408cd224420ac3a
- Full Text :
- https://doi.org/10.1149/ma2005-01/14/635