Three-terminal bistable low-threshold strained InGaAs/GaAs laser grown on structured substrates for digital modulation

Authors :: James J. Elliot
Hanmin Zhao
Newton C. Frateschi
R.N. Nottenburg
P.D. Dapkus
S. Siala
M. Govindarajan
Source :: IEEE Photonics Technology Letters. 5:275-278
Publication Year :: 1993
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1993.
Abstract: Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off switching ratio of 556 was obtained for a 30-mV change in absorber voltage. An optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. These results show a great improvement in the digital (on-off) switching performance of three-terminal lasers with intracavity modulators. >

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