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Next-Generation Copper, Nickel and Lead-Free Metallization Products for Next-Generation Devices and Applications

Authors :
Yi Qin
Wataru Tachikawa
Jonathan Prange
Jeffrey M. Calvert
Masaaki Imanari
Mark Lefebvre
Jianwei Dong
Julia Woertink
Yil-Hak Lee
Matthew Thorseth
Inho Lee
Source :
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:000611-000638
Publication Year :
2015
Publisher :
IMAPS - International Microelectronics Assembly and Packaging Society, 2015.

Abstract

Flip-chip interconnect and 3-D packaging applications must utilize reliable, high-performance metallization products in order to produce highly-efficient, low-cost microelectronic devices. As the market moves to shrinking device architectural features and increasingly difficult pattern layouts, more demand is placed on the plating performance of the copper, nickel and lead-free solder products used to create these interconnects. Additionally, the move from traditional C4 bumping processes with lead-free solder to capping processes utilizing copper pillars with lead-free solder requires metal interfaces that are highly compatible in order to avoid defects that could occur. In this paper, next-generation products developed for copper pillar, nickel barrier, and lead-free solder plating will be introduced that are capable of delivering high-performance and highly reliable metallic interconnects. The additive packages that were selected and optimized allowing for increased rate of electrodeposition, uniform height control with controllable pillar shape and smooth surface morphology will be discussed. Furthermore, compatibility will be shown for a lead-free solder cap electrodeposited onto copper pillar structures, both with and without nickel barrier layers, on large pore features (≥50 μm diameter) and micro pore features (≤20 μm diameter) for both bumping and capping applications.

Details

ISSN :
23804491
Volume :
2015
Database :
OpenAIRE
Journal :
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
Accession number :
edsair.doi...........189718f5c60c6f075c174c673271b262
Full Text :
https://doi.org/10.4071/2015dpc-tp23