Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La 0.25 Sr 0.75 CoO 3 and SrRuO 3 electrodes

New methods for fabricating highly -oriented and complete -textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) films on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes. The -preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1×1010 switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the -textured PTZT film capacitor retains 94.7% of its polarization after 1.5×1010 switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism.