A new substrate model and parameter extraction method for DNW RF MOSFETs

A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in [1] is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.