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Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in hydrogen gas
- Source :
- 1998 GaAs Reliability Workshop. Proceedings (Cat. No.98EX219).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Here we approach for the first time the problem of hydrogen poisoning for Al/Ti-gate (Pt-free) AlGaAs/GaAs power HFETs. Throughout the stress, we have monitored the changes of I/sub DSS/, g/sub m/, threshold voltage (V/sub T/) and gate barrier height (/spl Phi//sub B/) The separate measurement of the shifts of V/sub T/ and /spl Phi//sub B/ allows us to gain new insight of the mechanisms underlying the device changes during hydrogen exposure. Moreover, by measuring the source-gate and drain-gate breakdown voltages, as well as the g/sub m/ frequency dispersion, we can speculate on the effect of hydrogenation on the access regions on the gate sides.
Details
- Database :
- OpenAIRE
- Journal :
- 1998 GaAs Reliability Workshop. Proceedings (Cat. No.98EX219)
- Accession number :
- edsair.doi...........1763a7d3611ee6af2381485d5ad4b695