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Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor

Authors :
S. I. Goloshchapov
T. V. Tisnek
A. G. Zabrodskiĭ
A. I. Veĭnger
Source :
Semiconductors. 41:790-798
Publication Year :
2007
Publisher :
Pleiades Publishing Ltd, 2007.

Abstract

The changes in the spectrum and g factor of electron spin resonance due to the interaction of spins in the insulator state of n-Ge near the insulator-metal phase transition are studied. It is found that, in this region, the g factor decreases as the doping level is increased and exhibits anisotropy in the immediate vicinity of the transition. The effects of compensation and induced antiferromagnetic ordering on the g factor are analyzed. It is shown that, as the transition point is approached, the high-temperature limit of observation of the electron spin resonance rises sharply.

Details

ISSN :
10906479 and 10637826
Volume :
41
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........1728815b6acb445bf8b117f59932b2dd
Full Text :
https://doi.org/10.1134/s1063782607070044