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Improving breakdown voltage for 120 V level up shifter by using vertical and lateral assisted depletion layers in 0.35 μm CMOS technology
- Source :
- Japanese Journal of Applied Physics. 59:SGGD15
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........1710d42c5f4736619ed8d1e6f56d1eed
- Full Text :
- https://doi.org/10.35848/1347-4065/ab75ba