High-performance 801×512-element PtSi Schottky-barrier infrared image sensor

A high-performance 801×512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a multiphase CSD with an on-chip multiphase CMOS clock generator. Flexible vertical scan is also possible using a newly developed transfer gate scanner. A large fill factor of 61% is obtained in spite of the small pixel size of 17×20μm2. The differential temperature response and noise equivalent temperature difference with f/1.2 optics at 300K were 2.2×104 electrons/K and 0.037K, respectively. The saturation signal level was 2.1×106 electrons and the total power consumption of the device was less than 50mW.