Back to Search
Start Over
Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy
- Source :
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- The use of Kelvin Probe Force Microscopy to investigate PN junctions under illumination and electrical bias has been shown to be an effective way to analyze the electrical properties of solar cells at the nanoscale. We use it here, for the first time, on interdigitated back contact solar cells. Measurements are performed between the metallic fingers under an electrical bias in the dark and under illumination in open circuit conditions. Our results show that that KPFM could be used to identify and localize diodes resistance losses at the nanoscale.
- Subjects :
- Kelvin probe force microscope
Materials science
Silicon
Open-circuit voltage
business.industry
chemistry.chemical_element
Heterojunction
Biasing
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Optics
chemistry
Microscopy
0210 nano-technology
business
Nanoscopic scale
Diode
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
- Accession number :
- edsair.doi...........16abf4e4ceda3c6fb94366469c8fd0a2