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Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer
- Source :
- Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2013
- Publisher :
- The Japan Society of Applied Physics, 2013.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........169001afc1c1c1766b1495ef0c23ef7c
- Full Text :
- https://doi.org/10.7567/ssdm.2013.ps-7-2