Caract�risation �lectrique et optique du diseleniure de cuivre et d'indium

Hall coefficient and electrical mobility of electrons are measured in non-degenerate n-type CuInSe2 samples when the temperature varies between 4 and 300 K. The diffusion of electrons by ionized impurity, acoustic phonons and optical polar phonons are dominant in the high temperature regime. Far infrared reflectivity experiments at 300 K on Zn-doped CuInSe2 have been made. By considering the contribution of the plasmons to the complex dielectric function, from the analysis of the phonons spectra, the electron concentration and the carrier mobility are estimated. These values are in good agreement with those obtained from the electrical measurement.