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Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer
- Source :
- ACS Applied Electronic Materials. 2:827-837
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resist...
Details
- ISSN :
- 26376113
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........159c50af5be6b945101e90b381214d7c