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Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer

Authors :
Honglang Li
Jianwei Guo
Shen Guo
Xiaoming Su
Huajun Sun
Jianbing Zhang
Sheng Zhu
Wei Luo
Daoli Zhang
Yue Pang
Source :
ACS Applied Electronic Materials. 2:827-837
Publication Year :
2020
Publisher :
American Chemical Society (ACS), 2020.

Abstract

Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resist...

Details

ISSN :
26376113
Volume :
2
Database :
OpenAIRE
Journal :
ACS Applied Electronic Materials
Accession number :
edsair.doi...........159c50af5be6b945101e90b381214d7c