Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.