Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

Authors :: Jiayue Yuan
P.J. van Veldhoven
Hao Wang
P. Nouwens T. de Vries
E.J. Geluk
E. Smalbrugge
R Richard Nötzel
Source :: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices.
Publication Year :: 2010
Publisher :: IEEE, 2010.
Abstract: We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 µm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.

Subjects :: Photoluminescence
Materials science
Planar
Semiconductor quantum dots
Quantum dot
business.industry
Optoelectronics
Metalorganic vapour phase epitaxy
business
Epitaxy
Smooth surface
Pyramid (geometry)

Database :: OpenAIRE
Journal :: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Accession number :: edsair.doi...........1572d94764764da908c4bd0f5c39fa92
Full Text :: https://doi.org/10.1109/commad.2010.5699798

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