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A 0.13 <formula formulatype='inline'><tex Notation='TeX'>$\mu$</tex> </formula><emphasis emphasistype='roman'>m</emphasis> CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

Authors :
Pei-Wei Chen
Ming-Da Tsai
Tser-yu Lin
Yu-Hsin Lin
Rickey Yu
Chih-Wei Yeh
Yi-Bin Lee
Guang-Kaai Dehng
Sheng-Jui Huang
Ling-Wei Ke
Yen-Horng Chen
Bosen Tzeng
Source :
IEEE Journal of Solid-State Circuits. 44:1454-1463
Publication Year :
2009
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2009.

Abstract

This paper presents a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS/EDGE applications which adopts a direct-conversion receiver, a direct-conversion transmitter and a fractional-N frequency synthesizer with a built-in DCXO. In the GSM mode, the transmitter delivers 4 dBm of output power with 1deg RMS phase error and the measured phase noise is -164.5 dBc/Hz at 20 MHz offset from a 914.8 MHz carrier. In the EDGE mode, the TX RMS EVM is 2.4% with a 0.5 dB gain step for the overall 36 dB dynamic range. The RX NF and IIP3 are 2.7 dB/-12 dBm for the low bands (850/900 MHz) and 3 dB/-11 dBm for the high bands (1800/1900 MHz). This transceiver is implemented in 0.13 mum CMOS technology and occupies 10.5 mm2. The device consumes 118 mA and 84 mA in TX and RX modes from 2.8 V, respectively and is housed in a 5 times 5 mm2 40-pin QFN package.

Details

ISSN :
1558173X and 00189200
Volume :
44
Database :
OpenAIRE
Journal :
IEEE Journal of Solid-State Circuits
Accession number :
edsair.doi...........155134855a6d75ac34de8506e2d271cb