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Read-Cycle Endurance of Magnetic Random Access Memory Elements
- Source :
- IEEE Transactions on Magnetics. 40:2631-2633
- Publication Year :
- 2004
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2004.
-
Abstract
- The read-cycle endurance of a magnetic tunneling junction (MTJ) has been investigated, focusing on the spin-dependent tunneling current at high temperatures. The MTJ structure used in this study consisted of Ta-NiFe-CoFe-AlOx-CoFe-IrMn-NiFe-Ta prepared on a thermally oxidized Si wafer. Both the tunneling current and tunneling magnetoresistance ratio showed no significant degradation during the 1E9 read-cycle test using unipolar voltage pulses of 0.5 V at room temperature. Temperature dependence of the MTJs resistance calculated from the measured tunneling current has also been examined in a temperature range from room temperature to 175/spl deg/C. Furthermore, in the case of read-cycle tests for thermally stressed MTJs, the variation of the tunneling current was less than 2% after 1E9 cycles at a stress temperature of 175/spl deg/C. This indicates that MTJs have sufficient read-cycle endurance under high-temperature operation.
Details
- ISSN :
- 00189464
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Magnetics
- Accession number :
- edsair.doi...........14a72cfd70f724da5be3b4bb25088bec