Laser formation of Pt-Si Schottky barriers on silicon

135 nsec pulses ofλ = 1.06μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500A thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.