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Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer

Authors :
Hiroyuki Okada
Mir Waqas Alam
Shigeki Naka
Zhao-Kui Wang
Yanhui Lou
Source :
Applied Physics Letters. 100:043302
Publication Year :
2012
Publisher :
AIP Publishing, 2012.

Abstract

We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3 doping.

Details

ISSN :
10773118 and 00036951
Volume :
100
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........1446969b1dc09e1b612e6373a56c4c8c
Full Text :
https://doi.org/10.1063/1.3680249