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Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer
- Source :
- Applied Physics Letters. 100:043302
- Publication Year :
- 2012
- Publisher :
- AIP Publishing, 2012.
-
Abstract
- We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3 doping.
- Subjects :
- Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Doping
technology, industry, and agriculture
Organic semiconductor
Pentacene
chemistry.chemical_compound
Band bending
Semiconductor
chemistry
Thin-film transistor
Optoelectronics
lipids (amino acids, peptides, and proteins)
business
human activities
Layer (electronics)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 100
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........1446969b1dc09e1b612e6373a56c4c8c
- Full Text :
- https://doi.org/10.1063/1.3680249