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A robust spacer gate process for deca-nanometer high-frequency MOSFETs
- Source :
- Microelectronic Engineering. 83:434-439
- Publication Year :
- 2006
- Publisher :
- Elsevier BV, 2006.
-
Abstract
- This paper, presents a robust spacer technology for definition of deca-nanometer gate length MOSFETs. Conformal deposition, selective anisotropic dry-etching and selective removal of sacrificial layers enabled patterning of an oxide hard mask with deca-nanometer lines combined with structures defined with I-line lithography on a wafer. The spacer gate technology produces negligible topographies on the hard mask and no residual particles could be detected on the wafer. The line-width roughness of 40nm poly-Si gate lines was 4nm and the conductance of 200@mm long lines exhibited a standard deviation of 6% across a wafer. nMOSFETs with 45nm gate length exhibited controlled short-channel effects and the average maximum transconductance in saturation was 449@mS/@mm with a standard deviation of 3.7% across a wafer. The devices exhibited a cut-off frequency above 100GHz at a drain current of 315@mA/@mm. The physical and electrical results show that the employed spacer gate technology is robust and can define deca-nanometer nMOSFETs with high yield and good uniformity.
- Subjects :
- Materials science
business.industry
Transconductance
Time-dependent gate oxide breakdown
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Cutoff frequency
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Nanoelectronics
Gate oxide
MOSFET
Optoelectronics
Wafer
Electrical and Electronic Engineering
business
Lithography
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........142ae240d7475ebe050be39743c3f492