FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

MLA

Tao Yang, et al. “FOI FinFET with Ultra-Low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin.” 2016 IEEE International Electron Devices Meeting (IEDM), Dec. 2016. EBSCOhost, https://doi.org/10.1109/iedm.2016.7838438.

APA

Tao Yang, Jun Luo, Huaxiang Yin, Jianfeng Gao, Shujian Mao, Huilong Zhu, Changliang Qin, Zhangyu Zhou, Qiuxia Xu, Yang Qu, Yudong Li, Jiang Yan, Guilei Wang, Hong Yang, Yanbo Zhang, Junfeng Li, Qingzhu Zhang, Zhenhua Wu, Wenjuan Xiong, … Yongkui Zhang. (2016). FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin. 2016 IEEE International Electron Devices Meeting (IEDM). https://doi.org/10.1109/iedm.2016.7838438

Chicago

Tao Yang, Jun Luo, Huaxiang Yin, Jianfeng Gao, Shujian Mao, Huilong Zhu, Changliang Qin, et al. 2016. “FOI FinFET with Ultra-Low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin.” 2016 IEEE International Electron Devices Meeting (IEDM), December. doi:10.1109/iedm.2016.7838438.