Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

This paper presents an analysis of the effect of the SiO"2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO"2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO"2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.