Raman scattering in InAs∕(AlGa)As self-assembled quantum dots: Evidence of Al intermixing

Authors :: Laurence Eaves
Luis Artús
Jordi Ibáñez
Ramón Cuscó
Mohamed Henini
Amalia Patanè
Source :: Applied Physics Letters. 88:141905
Publication Year :: 2006
Publisher :: AIP Publishing, 2006.
Abstract: We use Raman scattering to study the composition of InAs self-assembled quantum dots (QDs) embedded in an AlxGa1−xAs matrix. When Al is introduced into the matrix (0.15

Subjects :: Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Phonon
Gallium arsenide
symbols.namesake
Matrix (mathematics)
chemistry.chemical_compound
chemistry
Quantum dot
symbols
Self-assembly
Luminescence
Raman spectroscopy
Raman scattering

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