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Wide Temperature Range Operation of 25-Gb/s 1.3-μm InGaAlAs Directly Modulated Lasers
- Source :
- IEEE Journal of Selected Topics in Quantum Electronics. 17:1138-1145
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- High-speed 1.3-μm directly modulated lasers (DMLs) have been developed to support sharply rising optical communications traffic. The most crucial requirement for these lasers is the ability to operate over a wide temperature range with no power-consuming electric cooler. Due to poor temperature characteristics resulting from its poor electron confinement in the multiquantum well, DMLs with InGaAsP material systems have been replaced by DMLs with InGaAlAs material systems, which have stronger electron confinement. In this paper, progress in uncooled 25-Gb/s 1.3-μm InGaAlAs DMLs is summarized. A 160-μm-long ridge-waveguide-type laser showed a lower threshold current Ith of 14.9 mA at high temperatures up to 95 °C, and a small signal-frequency-response bandwidth f3dB of 14 GHz was achieved at a bias current of 60 mA at 95 °C. Using this laser, clear 25-Gb/s operation was obtained at 95 °C. In addition, stable operation was achieved for up to 4000 h at 85 °C, indicating the basic applicability of the device to next-generation 25-Gb/s data communication systems. Furthermore, the developed technology was applied to a novel uncooled 25-Gb/s 1.3-μm surface-emitting laser for optical interconnects, in which a 45° mirror and a lens were integrated monolithically.
- Subjects :
- Frequency response
Materials science
business.industry
Bandwidth (signal processing)
Optical communication
Biasing
Atmospheric temperature range
Laser
Atomic and Molecular Physics, and Optics
law.invention
Gallium arsenide
Lens (optics)
chemistry.chemical_compound
Optics
chemistry
law
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15584542 and 1077260X
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Selected Topics in Quantum Electronics
- Accession number :
- edsair.doi...........1371810c3d7eb45dc20803a62ff92ddd
- Full Text :
- https://doi.org/10.1109/jstqe.2011.2114644