Rare-earth based alternative gate dielectrics for future integration in MOSFETs

In this contribution, results on the structural and electrical properties of high-κ REScO 3 (RE = La, Gd, Tb, Sm) and LaLuO 3 amorphous thin films are presented. The study reveals that these oxides are potential candidates for future integration in MOSFETs. High dielectric constants up to 30 were measured for amorphous thin films of these materials, as well as low leakage current and low interface trap densities. Very promising results for transistors processed on SOI and sSOI substrates are also shown.