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Enhanced TE-polarized emission of AlGaN-based deep-ultraviolet light emitting diodes by using an InAlN insertion layer

Authors :
Yi Li
HaiHong Yin
Youhua Zhu
Meiyu Wang
Honghai Deng
Source :
Japanese Journal of Applied Physics. 58:114001
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Subjects

Subjects :
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Ultraviolet light emitting diodes
General Engineering
General Physics and Astronomy
Optoelectronics
business
Layer (electronics)

Details

ISSN :
13474065 and 00214922
Volume :
58
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........1343a070048dffbb70f627e960c22c92
Full Text :
https://doi.org/10.7567/1347-4065/ab47a8
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