A high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch

In this work, a novel GaN-based reverse blocking metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is investigated by TCAD sentaurus. A MIS field effect drain consisting of electrically shorted Ohmic and recessed MIS structure is adopted to enable the device with high reverse blocking capability and low offset voltage. The proposed enhancement-mode (E-mode) RB-MISHEMT delivers a low reverse current of 10 μA and a low offset voltage of 0.38 V at the same time. On-state power loss of the bidirectional switch based on proposed RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT can be fabricated with standard E-mode MISHEMT technology. The high performance and fabrication compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.