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1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
- Source :
- Semiconductor Science and Technology. 16:844-848
- Publication Year :
- 2001
- Publisher :
- IOP Publishing, 2001.
-
Abstract
- Different types of microcavities for GaAs-based light emitting devices operating in the 1.3 µm spectral range are analysed. Microcavity light-emitting diodes (MC LEDs) can be fabricated with different designs of distributed Bragg reflectors (DBRs), e.g.: top and bottom AlAs/GaAs semiconductor DBRs; bottom AlAs/GaAs semiconductor and top dielectric DBRs; and oxidized AlxOy/GaAs DBRs. MC LEDs operating in the 1.3 µm spectral range and characterized by spectral width (13 nm) and narrow far-field pattern ( 40%) differential efficiency retained. A threshold current of
- Subjects :
- Materials science
business.industry
Binary compound
Dielectric
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Optics
Semiconductor
chemistry
Ternary compound
law
Quantum dot
Spectral width
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Light-emitting diode
Diode
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........132c454e902c93d6b6222eb0351b99e7