Back to Search
Start Over
High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
- Source :
- 2010 IEEE International Reliability Physics Symposium.
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- We show that a model in which the breakdown of the interfacial layer induces a correlated breakdown in the high-K, at the same location, provides a good model of the high-K/IL gate stack statistics. We discuss of the implication of this model on the lifetime projection.
Details
- Database :
- OpenAIRE
- Journal :
- 2010 IEEE International Reliability Physics Symposium
- Accession number :
- edsair.doi...........13180047a313a5f16bb5a54ee805223e