Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs

MLA

T. Maeda, et al. “Poly Si-Si Interfacial Oxide Ball-up Mechanism and Its Control for 0.8 Mu m BiCMOS VLSIs.” Proceedings of the Bipolar Circuits and Technology Meeting, Jan. 2003. EBSCOhost, https://doi.org/10.1109/bipol.1989.69468.

APA

T. Maeda, H. Momose, J. Matsunaga, & M. Higashizono. (2003). Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs. Proceedings of the Bipolar Circuits and Technology Meeting. https://doi.org/10.1109/bipol.1989.69468

Chicago

T. Maeda, H. Momose, J. Matsunaga, and M. Higashizono. 2003. “Poly Si-Si Interfacial Oxide Ball-up Mechanism and Its Control for 0.8 Mu m BiCMOS VLSIs.” Proceedings of the Bipolar Circuits and Technology Meeting, January. doi:10.1109/bipol.1989.69468.