Back to Search
Start Over
Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs
- Source :
- Proceedings of the Bipolar Circuits and Technology Meeting.
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined. >
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of the Bipolar Circuits and Technology Meeting
- Accession number :
- edsair.doi...........130d15d05918a4f78104219567316227
- Full Text :
- https://doi.org/10.1109/bipol.1989.69468