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Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer
- Source :
- Journal of Applied Physics. 121:155302
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- A self-assembled three-dimensional (3-D) MoS2 microsphere-based memristor with a favorable ON/OFF resistance ratio of ∼104, endurance, and retention time is demonstrated at room temperature. The formation and rupture of a localized Ag metallic filament, establishment and destruction of a boundary-based hopping path, and charge trapping and detrapping from the space charge region co-contribute to the bipolar resistive switching memory behaviours observed in the device of Ag/MoS2/ITO. This work may give insight into the mechanism of the resistive switching memory behaviours of a device with a 3-D micro-scale.
- Subjects :
- 010302 applied physics
Work (thermodynamics)
Chemistry
business.industry
General Physics and Astronomy
Charge (physics)
Nanotechnology
02 engineering and technology
Trapping
Memristor
021001 nanoscience & nanotechnology
01 natural sciences
Active layer
law.invention
Protein filament
Mechanism (engineering)
Depletion region
law
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 121
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........130493ef862b8796f4dc6b75912df0ed