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Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer

Authors :
Yan Qing Yao
Peng Li
Xiude Yang
Guangdong Zhou
Ankun Zhou
Baofu Ding
Qunliang Song
Gang Wang
Zhisong Lu
Source :
Journal of Applied Physics. 121:155302
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

A self-assembled three-dimensional (3-D) MoS2 microsphere-based memristor with a favorable ON/OFF resistance ratio of ∼104, endurance, and retention time is demonstrated at room temperature. The formation and rupture of a localized Ag metallic filament, establishment and destruction of a boundary-based hopping path, and charge trapping and detrapping from the space charge region co-contribute to the bipolar resistive switching memory behaviours observed in the device of Ag/MoS2/ITO. This work may give insight into the mechanism of the resistive switching memory behaviours of a device with a 3-D micro-scale.

Details

ISSN :
10897550 and 00218979
Volume :
121
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........130493ef862b8796f4dc6b75912df0ed