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Detailed Analysis and Suppression of Crosstalk Voltage with SiC MOSFETs Considering Common-Source Inductance

Authors :
Xunyu Duan
Tu Junyao
Kong Wubin
Li Zhike
Xiong Qiaopo
Zhixian Zhong
Luo Zhiqing
Sitao Rao
Liu Hengyang
Source :
2021 IEEE 4th International Electrical and Energy Conference (CIEEC).
Publication Year :
2021
Publisher :
IEEE, 2021.

Abstract

The crosstalk voltage is the result of the combined effect of the displacement current generated by the gate-drain capacitance and the induced voltage introduced by the common source inductance. When considering common-source inductance, the relationship between the driving circuit impedance and the spikes of crosstalk voltage is no longer a single correlation. This paper starts with the crosstalk phenomenon in the double pulse test (DPT) circuit, introduces the causes of the crosstalk phenomenon in detail, and constructs the equivalent circuit of the drive loop to obtain the mathematical expression of the crosstalk voltage calculation. Finally, through mathematical analysis, the influence of gate-source capacitance and gate resistance on the spikes of crosstalk voltage is obtained, which provides guidance for the design of driving parameters.

Details

Database :
OpenAIRE
Journal :
2021 IEEE 4th International Electrical and Energy Conference (CIEEC)
Accession number :
edsair.doi...........12feaf64be7fa1a2460c2353a284e4c3
Full Text :
https://doi.org/10.1109/cieec50170.2021.9510411