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Stress-induced leakage current in thin oxides under high-field impulse stressing
- Source :
- Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Stress-induced leakage current (SILC) decreases when the time-between-pulses (T/sub bp/) of an AC-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in T/sub bp/, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occurring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
- Accession number :
- edsair.doi...........12f6f97e4c7a3e589eb94d11316783b4