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Stress-induced leakage current in thin oxides under high-field impulse stressing

Authors :
P.S. Lim
Yen Nee Tan
Wai Kin Chim
Source :
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548).
Publication Year :
2002
Publisher :
IEEE, 2002.

Abstract

Stress-induced leakage current (SILC) decreases when the time-between-pulses (T/sub bp/) of an AC-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in T/sub bp/, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occurring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.

Details

Database :
OpenAIRE
Journal :
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
Accession number :
edsair.doi...........12f6f97e4c7a3e589eb94d11316783b4