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High bandwidth memory(HBM) with TSV technique

Authors :
Jonghoon Oh
Dong Beom Lee
Jong Chern Lee
Kyung Whan Kim
Tae Sik Yun
Hyeon Gon Kim
Sangmuk Oh
Jae-Jin Lee
Young Jun Ku
Hongjung Kim
Ho Sung Cho
Jun Hyun Chun
Hyun-Sung Lee
Ki Hun Kwon
Ji-hwan Kim
Young Jae Choi
Seok-Hee Lee
Chun-Seok Jeong
Dae Suk Kim
Source :
ISOCC
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

In this paper, HBM DRAM with TSV technique is introduced. This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM product using TSV, is widely presented, especially the use and features.

Details

Database :
OpenAIRE
Journal :
2016 International SoC Design Conference (ISOCC)
Accession number :
edsair.doi...........12e2566f6de4e93bbf2dd1c9055d10a7